MARUF HOSSAIN

1641 N. Oakland Ave Apt. 7

Fayetteville, AR-72703

Phone: (479) 283-3226, (479) 571-2198

Email: marufh@engr.uark.edu, hossain40@yahoo.com

 

 

Objective        To get a challenging entry-level position of Process/Product/Device Engineer. Interests include but not limited to oxidation, diffusion, etch, photolithography, fabrication of various devices and thin film.

 

Education        Ph.D. in Electrical Engineering, University of Arkansas, Fayetteville, Arkansas.

                        Expected graduation date August’ 2004. GPA: 3.52/4.0

                        Thesis: The effect of hydrogen on aluminum induced crystallization of sputtered amorphous silicon.

 

M.S. in Electrical Engineering, University of Arkansas, Fayetteville, Arkansas. December’ 2002. GPA: 3.1/4.0

                        Thesis: Chlorine doped CdS thin films from CdCl2 mixed CdS powder for solar cell application.

 

B.S. in Electrical & Electronic Engineering, Bangladesh University of Engineering & Technology, Dhaka, Bangladesh, September’ 1999

GPA: 3.69/4.0

 

Courses:         Related courses include Semiconductor Devices, Special Semiconductor Devices, IC Fabrication, IC Fabrication Lab., IC Design, IC Design Lab., Solid State Electronics I, Electronic Device Packaging I, Electronic Device Packaging II, Semiconductor Device Modeling & Simulation, & Organic Circuit Board.

 

Expertise        Sputter deposition, Plasma enhanced chemical vapor deposition (PECVD), Physical vapor deposition, Oxidation, Photolithography, Diffusion, Etch, Metallization,  X-ray diffractometer (XRD), Scanning electron microscope (SEM), Atomic force microscope (AFM), Fourier transform infra red (FTIR), Auger electron spectroscopy (AES), Tencor stress measurement system, Dektak thickness measurement system, Spectrophotometer, Mentor graphics, VHDL, System vision.   

 

Experience     Research Assistant, University of Arkansas, Fayetteville, Arkansas.

                        05/2003 to present

Currently working on aluminum induced crystallization of sputtered hydrogenated amorphous silicon (a-Si:H). Designed and implemented hydrogen gas line to introduce hydrogen into the silicon sputter chamber of a cluster tools to have hydrogen in the amorphous silicon film while depositing.  Also working on plasma enhanced chemical vapor deposition (PECVD) system to deposit a-Si:H. Compared the hydrogen content of the deposited film prepared by PECVD and sputtering. Compared the aluminum induced crystallization temperature of the films prepared by both the techniques.   Used fourier transform infrared (FTIR), spectrophotometer, X-ray diffractometer (XRD) and environmental scanning electron microscope (ESEM) to characterize the films. Used Auger electron spectroscopy (AES) for depth profile analysis at Oak Ridge National Laboratory, Oak Ridge, TN.

 

Research Assistant, University of Arkansas, Fayetteville, Arkansas

                        08/2002 to 05/2003

                        Developed parameter extraction software for SiC devices.

 

Technical Assistant, University of Arkansas, Fayetteville, Arkansas

                        01/2002 to 08/2002

Fabricated poly-crystalline silicon solar cells by crystallization and silicon solar cells by diffusion in the fabrication lab. Compared the characteristic curves between these solar cells. Developed own process steps for poly-crystalline silicon solar cells, which gave 30% higher efficiency than previously fabricated solar cell. Fabrication process includes oxidation, diffusion, photolithography, etch and metal deposition. Fixed the problems of metal evaporator, wafer aligner and solar simulator. Solved the problems of back contacts of some of the solar cells. Designed the sample holder for the solar simulator with vacuum facility. Trained on operating oxidation furnace, wafer aligner, spin-coating system, curve tracer and evaporator.  

 

                        Teaching Assistant, University of Arkansas, Fayetteville, AR

                        08/2001 to 12/2001

Taught a lab of 12 graduate students, named Fabrication of Solar Cell. Facilitated students to understand the fabrication process and assisted them to fabricate silicon solar cells in the fabrication lab. The fabrication steps include Oxidation, Photolithography, Diffusion, Etch, & Metallization.

 

Research Assistant, University of Arkansas, Fayetteville, AR

                        3/2000 to 8/2001

Developed a process to produce high quality cadmium sulfide thin film for solar cell application. Trained to operate vacuum evaporator, dektak (thickness measurement system), resistivity measurement system, I-V measurement system, scanning electron microscope (SEM), atomic force microscope (AFM), and x-ray diffractometer (XRD). Deposited cadmium sulfide and chlorine doped cadmium sulfide on glass substrate. Measured the thickness, resistivity and hall voltage of those films to calculate carrier concentration and mobility. Measured grain size of deposited films using AFM. Established that quality cadmium sulfide films could be made by vacuum evaporation with chlorine doping during the evaporation.

 

Publications    •          “The effect of substrate temperature and native oxide layer on aluminum induced crystallization of sputtered amorphous silicon”, Maruf Hossain, Husam Abu-Safe, Marwan Barghouti, Hameed Naseem, & W. D. Brown, Material Research Society Symposium Proceedings, Vol. 808, P. A4.22.1-A4.22.6, 2004.

•          “Fabrication of crystalline silicon solar cell by aluminum induced crystallization technique”, Maruf Hossain, Husam Abu-Safe, Hameed Naseem, & W. D. Brown. Technical digest of the 14th International Photovoltaic Science and Engineering Conference (PVSEC-14), Vol. 1, P. 219-220, 2004

•        “Effect of stress on aluminum induced crystallization of magnetron sputtered amorphous silicon”, Maruf Hossain, Li Cai, Husam Abu-Safe, Hameed Naseem, & W. D. Brown, Submitted to the Electrochemical Society Symposium Proceedings, 2004.

                        •          “Chlorine doped CdS thin films from CdCl2 mixed CdS powder", Journal of Electronic Materials, Husam Abu-Safe, Maruf Hossain, Hameed Naseem, W. D. Brown, & Abdullah Al-Dhafiri, Vol. 33, No. 2, P. 128-134, 2004.

•          “Characterization of silicon nitride films for thin film transistor’s gate dielectric”, Saad Abbasi, Maruf Hossain, Husam Abu-Safe, Hameed Naseem, & W. D. Brown, Electrochemical Society Symposium Proceedings, Vol. 2004-01, P. 222-229, 2004.

 

Proposal          Wrote a proposal to perform experiments on aluminum induced crystallization in Oakridge national laboratory. The proposal was accepted.

 

Leadership      Elected President of Bangladesh Student Association of University of

Arkansas for the year of 2000-2001.

 

Computer        Mentor, VHDL, System vision, UNIX shell programming, PSpice, Orcad,

knowledge      Matlab, Visual Basic, C, C++, FORTRAN, Microsoft FrontPage, Microwave office, Microsoft office.

 

Reference       Will be available upon request.